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| ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES * 4.5 amps continuous current * Up to 10 amps peak current * Very low saturation voltages SOT89 APPLICATIONS * Motor driving * Line switching * High side switches * Subscriber line interface cards (SLIC) ORDERING INFORMATION DEVICE REEL SIZE 7" TAPE WIDTH 12mm embossed QUANTITY PER REEL 1,000 units ZXTN2011ZTA PINOUT DEVICE MARKING 853 VIEW ISSUE 2 - MAY 2006 1 SEMICONDUCTORS ZXTN2011Z ABSOLUTE MAXIMUM RATINGS PARAMETER Collector base voltage Collector emitter voltage Emitter base voltage Continuous collector current Peak pulse current Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C Linear derating factor (b) (a) SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT 200 100 7 4.5 10 1.5 12 2.1 16.8 -55 to +150 UNIT V V V A A W mW/C W mW/C C Operating and storage temperature range THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R JA R JA LIMIT 83 60 UNIT C/W C/W Junction to ambient (b) NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 2 - MAY 2006 SEMICONDUCTORS 2 ZXTN2011Z CHARACTERISTICS ISSUE 2 - MAY 2006 3 SEMICONDUCTORS ZXTN2011Z ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector base breakdown voltage Collector emitter breakdown voltage Collector emitter breakdown voltage Emitter base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage SYMBOL BV CBO BV CER BV CEO BV EBO I CBO I CER R 1k I EBO V CE(SAT) 20 45 85 155 Base emitter saturation voltage Base emitter turn on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) h FE 100 100 30 10 Transition frequency Output capacitance Switching times fT C OBO t ON t OFF 1000 900 230 200 60 20 130 26 41 1010 300 MIN. 200 200 100 7 TYP. 235 235 115 8.1 50 0.5 100 0.5 10 30 60 115 195 1100 1000 MAX. UNIT CONDITIONS V V V V nA A nA A nA mV mV mV mV mV mV I C = 100 A I C = 1 A, RB I C = 10mA* I E = 100 A VCB = 150V VCB = 150V, Tamb=100 C V CB = 150V VCB = 150V, Tamb=100 C V EB = 6V I C = 0.1A, I B = 5mA* I C = 1A, I B = 100mA* I C = 2A, I B = 100mA* I C = 5A, I B = 500mA* I C = 5A, I B = 500mA* I C = 5A, V CE = 2V* I C = 10mA, V CE = 2V* I C = 2A, V CE = 2V* I C = 5A, V CE = 2V* I C = 10A, V CE = 2V* MHz I C = 100mA, V CE = 10V f=50MHz pF ns V CB = 10V, f= 1MHz* I C = 1A, V CC = 10V, I B1 = I B2 = 100mA 1k * Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. ISSUE 2 - MAY 2006 SEMICONDUCTORS 4 ZXTN2011Z TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2006 5 SEMICONDUCTORS ZXTN2011Z PACKAGE OUTLINE PACKAGE DIMENSIONS Millimeters DIM Min A b b1 b2 c D 1.40 0.38 1.50 0.28 4.40 Max 1.60 0.48 0.53 1.80 0.44 4.60 Min 0.550 0.015 0.060 0.011 0.173 Max 0.630 0.019 0.021 0.071 0.017 0.181 e E E1 G H Inches DIM Min 1.40 3.75 2.90 2.60 Max 1.50 4.25 2.60 3.00 2.85 Min 0.055 0.150 0.114 0.102 Max 0.059 0.167 0.102 0.118 0.112 Millimeters Inches (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - MAY 2006 SEMICONDUCTORS 6 |
Price & Availability of ZXTN2011ZTA
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